{"created":"2023-05-15T14:38:01.063500+00:00","id":49043,"links":{},"metadata":{"_buckets":{"deposit":"8bd01987-3300-433d-8f47-e876057e5b29"},"_deposit":{"created_by":1,"id":"49043","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"49043"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00049043","sets":["1"]},"author_link":["494633","494631","494636","494637","494630","494629","494632","494634","494641","494635","494638","494639","494640"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-03","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"326","bibliographicPageStart":"321","bibliographicVolumeNumber":"202","bibliographic_titles":[{"bibliographic_title":"Proceedings of the 15th International Conference on X-Ray Lasers"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The authors investigate a low-fluence laser processing system with a femtosecond double-pulse beam and surface excitation of a power semiconductor wafer. The double-pulse laser processing method enables a semiconductor surface to be processed at a lower fluence and prevents penetration damage of the processed surface. The first pulse of the double beam is considered to have a role in exciting the semiconductor surface to increase the efficiency of light energy absorption. In this report, to verify the feasibility of low-fluence processing, we measure the damage threshold in the low-fluence ablation process.","subitem_description_type":"Abstract"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1007/978-3-319-73025-7_48","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"https://link.springer.com/chapter/10.1007/978-3-319-73025-7_48"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://link.springer.com/chapter/10.1007/978-3-319-73025-7_48","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0930-8989","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Matsunaga, K."}],"nameIdentifiers":[{"nameIdentifier":"494629","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hayashi, T."}],"nameIdentifiers":[{"nameIdentifier":"494630","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kurokawa, S."}],"nameIdentifiers":[{"nameIdentifier":"494631","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yokoo, H."}],"nameIdentifiers":[{"nameIdentifier":"494632","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hasegawa, Noboru"}],"nameIdentifiers":[{"nameIdentifier":"494633","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nishikino, Masaharu"}],"nameIdentifiers":[{"nameIdentifier":"494634","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kumada, T."}],"nameIdentifiers":[{"nameIdentifier":"494635","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Otobe, Tomohito"}],"nameIdentifiers":[{"nameIdentifier":"494636","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Matsukawa, Y."}],"nameIdentifiers":[{"nameIdentifier":"494637","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takaya, Y."}],"nameIdentifiers":[{"nameIdentifier":"494638","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"長谷川 登","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"494639","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"錦野 将元","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"494640","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"乙部 智仁","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"494641","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam ","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam "}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-05-18"},"publish_date":"2018-05-18","publish_status":"0","recid":"49043","relation_version_is_last":true,"title":["Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam "],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:21:35.619806+00:00"}