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  1. 原著論文

Effect of substrate orientation on strain relaxation mechanisms of InGaAs layer grown on vicinal GaAs substrates measured by in situ X-ray diffraction

https://repo.qst.go.jp/records/48519
https://repo.qst.go.jp/records/48519
97906ace-8f9d-4753-86ad-d626f3981966
Item type 学術雑誌論文 / Journal Article(1)
公開日 2018-02-15
タイトル
タイトル Effect of substrate orientation on strain relaxation mechanisms of InGaAs layer grown on vicinal GaAs substrates measured by in situ X-ray diffraction
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 Suzuki, Hidetoshi

× Suzuki, Hidetoshi

WEKO 487709

Suzuki, Hidetoshi

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佐々木, 拓生

× 佐々木, 拓生

WEKO 487710

佐々木, 拓生

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高橋, 正光

× 高橋, 正光

WEKO 487711

高橋, 正光

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Ohshita, Yoshio

× Ohshita, Yoshio

WEKO 487712

Ohshita, Yoshio

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Kojima, Nobuaki

× Kojima, Nobuaki

WEKO 487713

Kojima, Nobuaki

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Kamiya, Itaru

× Kamiya, Itaru

WEKO 487714

Kamiya, Itaru

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Fukuyama, Atsuhiko

× Fukuyama, Atsuhiko

WEKO 487715

Fukuyama, Atsuhiko

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Ikari, Tetsuo

× Ikari, Tetsuo

WEKO 487716

Ikari, Tetsuo

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Yamaguchi, Masafumi

× Yamaguchi, Masafumi

WEKO 487717

Yamaguchi, Masafumi

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佐々木 拓生

× 佐々木 拓生

WEKO 487718

en 佐々木 拓生

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高橋 正光

× 高橋 正光

WEKO 487719

en 高橋 正光

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抄録
内容記述タイプ Abstract
内容記述 The effect of substrate orientation on strain relaxation mechanisms of an InGaAs layer grown on vicinal GaAs substrates was investigated by
in situ X-ray diffraction (XRD). The crystallographic tilt and indium segregation in the InGaAs layer were altered depending on the miscut direction
and angle. In the case of the substrate tilted 6° toward the [110] direction, one type of misfit dislocations was formed preferentially rather than other
types, especially in the rapid relaxation phase. While in the case of the substrate tilted 6° toward the [1-10] direction, no anisotropies during
relaxation were observed. The present finding indicates that the appropriate use of vicinal substrates may lead to a novel method of improving the
crystal quality of heterolayers.
書誌情報 Japanese Journal of Applied Physics

巻 56, 号 8S2, p. 08MA06-1-08MA06-4, 発行日 2017-08
出版者
出版者 IOP science
DOI
識別子タイプ DOI
関連識別子 10.7567/JJAP.56.08MA06
関連サイト
識別子タイプ DOI
関連識別子 https://doi.org/10.7567/JJAP.56.08MA06
関連名称 https://doi.org/10.7567/JJAP.56.08MA06
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