@article{oai:repo.qst.go.jp:00048519,
 author = {Suzuki, Hidetoshi and 佐々木, 拓生 and 高橋, 正光 and Ohshita, Yoshio and Kojima, Nobuaki and Kamiya, Itaru and Fukuyama, Atsuhiko and Ikari, Tetsuo and Yamaguchi, Masafumi and 佐々木 拓生 and 高橋 正光},
 issue = {8S2},
 journal = {Japanese Journal of Applied Physics},
 month = {Aug},
 note = {The effect of substrate orientation on strain relaxation mechanisms of an InGaAs layer grown on vicinal GaAs substrates was investigated by
in situ X-ray diffraction (XRD). The crystallographic tilt and indium segregation in the InGaAs layer were altered depending on the miscut direction
and angle. In the case of the substrate tilted 6° toward the [110] direction, one type of misfit dislocations was formed preferentially rather than other
types, especially in the rapid relaxation phase. While in the case of the substrate tilted 6° toward the [1-10] direction, no anisotropies during
relaxation were observed. The present finding indicates that the appropriate use of vicinal substrates may lead to a novel method of improving the
crystal quality of heterolayers.},
 pages = {08MA06-1--08MA06-4},
 title = {Effect of substrate orientation on strain relaxation mechanisms of InGaAs layer grown on vicinal GaAs substrates measured by in situ X-ray diffraction},
 volume = {56},
 year = {2017}
}