{"created":"2023-05-15T14:37:36.617893+00:00","id":48519,"links":{},"metadata":{"_buckets":{"deposit":"ec319e79-e866-4b35-8bdb-6cff643a57cb"},"_deposit":{"created_by":1,"id":"48519","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"48519"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00048519","sets":["1"]},"author_link":["487712","487719","487715","487714","487717","487709","487711","487710","487718","487713","487716"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2017-08","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"8S2","bibliographicPageEnd":"08MA06-4","bibliographicPageStart":"08MA06-1","bibliographicVolumeNumber":"56","bibliographic_titles":[{"bibliographic_title":"Japanese Journal of Applied Physics"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The effect of substrate orientation on strain relaxation mechanisms of an InGaAs layer grown on vicinal GaAs substrates was investigated by\nin situ X-ray diffraction (XRD). The crystallographic tilt and indium segregation in the InGaAs layer were altered depending on the miscut direction\nand angle. In the case of the substrate tilted 6° toward the [110] direction, one type of misfit dislocations was formed preferentially rather than other\ntypes, especially in the rapid relaxation phase. While in the case of the substrate tilted 6° toward the [1-10] direction, no anisotropies during\nrelaxation were observed. The present finding indicates that the appropriate use of vicinal substrates may lead to a novel method of improving the\ncrystal quality of heterolayers.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP science"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.7567/JJAP.56.08MA06","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"https://doi.org/10.7567/JJAP.56.08MA06"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.7567/JJAP.56.08MA06","subitem_relation_type_select":"DOI"}}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Suzuki, Hidetoshi"}],"nameIdentifiers":[{"nameIdentifier":"487709","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐々木, 拓生"}],"nameIdentifiers":[{"nameIdentifier":"487710","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋, 正光"}],"nameIdentifiers":[{"nameIdentifier":"487711","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshita, Yoshio"}],"nameIdentifiers":[{"nameIdentifier":"487712","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kojima, Nobuaki"}],"nameIdentifiers":[{"nameIdentifier":"487713","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kamiya, Itaru"}],"nameIdentifiers":[{"nameIdentifier":"487714","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Fukuyama, Atsuhiko"}],"nameIdentifiers":[{"nameIdentifier":"487715","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ikari, Tetsuo"}],"nameIdentifiers":[{"nameIdentifier":"487716","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamaguchi, Masafumi"}],"nameIdentifiers":[{"nameIdentifier":"487717","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐々木 拓生","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"487718","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋 正光","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"487719","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Effect of substrate orientation on strain relaxation mechanisms of InGaAs layer grown on vicinal GaAs substrates measured by in situ X-ray diffraction","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Effect of substrate orientation on strain relaxation mechanisms of InGaAs layer grown on vicinal GaAs substrates measured by in situ X-ray diffraction"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-02-15"},"publish_date":"2018-02-15","publish_status":"0","recid":"48519","relation_version_is_last":true,"title":["Effect of substrate orientation on strain relaxation mechanisms of InGaAs layer grown on vicinal GaAs substrates measured by in situ X-ray diffraction"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:27:14.974541+00:00"}