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Direct evaluation of influence of electron damage on the subcell performance in triple-junction solar cells using photoluminescence decays
https://repo.qst.go.jp/records/48477
https://repo.qst.go.jp/records/48477c0674a8e-a9cf-48f3-a59a-283a9ebd35b8
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-02-07 | |||||
| タイトル | ||||||
| タイトル | Direct evaluation of influence of electron damage on the subcell performance in triple-junction solar cells using photoluminescence decays | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
M., Tex David
× M., Tex David× Nakamura, Tetsuya× Imaizumi, Mitsuru× Ohshima, Takeshi× Kanemitsu, Yoshihiko× 大島 武 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The analysis of the subcell performance is crucial to understand the device physics and achieve optimized designs of triple junction solar cells which is a main stream of space solar cells now. Radiation-induced damage of inverted grown InGaP/GaAs/InGaAs triple-junction solar cells for various electron fluences are characterized using conventional current-voltage measurements and time-resolved photoluminescence. The conversion efficiencies of the entire device before and after damage are measured with current-voltage curves and compared with the efficiencies predicted from the time-resolved method. Using the time-resolved data, the change in the carrier dynamics in the subcells is discussed. | |||||
| 書誌情報 |
Scientific Reports 巻 7, p. 1985-1-1985-8, 発行日 2017-05 |
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| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1038/s41598-017-02141-0 | |||||
