@article{oai:repo.qst.go.jp:00048477,
 author = {M., Tex David and Nakamura, Tetsuya and Imaizumi, Mitsuru and Ohshima, Takeshi and Kanemitsu, Yoshihiko and 大島 武},
 journal = {Scientific Reports},
 month = {May},
 note = {The analysis of the subcell performance is crucial to understand the device physics and achieve optimized designs of triple junction solar cells which is a main stream of space solar cells now. Radiation-induced damage of inverted grown InGaP/GaAs/InGaAs triple-junction solar cells for various electron fluences are characterized using conventional current-voltage measurements and time-resolved photoluminescence. The conversion efficiencies of the entire device before and after damage are measured with current-voltage curves and compared with the efficiencies predicted from the time-resolved method. Using the time-resolved data, the change in the carrier dynamics in the subcells is discussed.},
 pages = {1985-1--1985-8},
 title = {Direct evaluation of influence of electron damage on the subcell performance in triple-junction solar cells using photoluminescence decays},
 volume = {7},
 year = {2017}
}