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In situ X-ray diffraction of GaAs/MnSb/Ga(In)As heterostructures
https://repo.qst.go.jp/records/48452
https://repo.qst.go.jp/records/48452f1aeab3e-de89-4715-bb94-ad386ecdc884
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-02-06 | |||||
| タイトル | ||||||
| タイトル | In situ X-ray diffraction of GaAs/MnSb/Ga(In)As heterostructures | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
J., Mousley P.
× J., Mousley P.× W., Burrows C.× J., Ashwin M.× 高橋, 正光× 佐々木, 拓生× R., Bell G.× 高橋 正光× 佐々木 拓生 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The growth of GaAs on MnSb by molecular beam epitaxy (MBE) has been investigated. MnSb epilayers on GaAs(111), GaAs(001) and In0.5Ga0.5As(111) of thickness ∼ 50 nm were used as substrates for GaAs films. The MBE growth of GaAs was monitored using synchrotron X-ray diffraction and reflection high energy electron diffraction. The strain relaxation and growth mode of GaAs on MnSb are presented as well as the epitaxial relationship between GaAs and MnSb. | |||||
| 書誌情報 |
physica status solidi (b) 巻 254, 号 2, p. 1600503-1-1600503-5, 発行日 2016-10 |
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| 出版者 | ||||||
| 出版者 | Wiley | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0370-1972 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1002/pssb.201600503 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | http://onlinelibrary.wiley.com/doi/10.1002/pssb.201600503/full | |||||
| 関連名称 | http://onlinelibrary.wiley.com/doi/10.1002/pssb.201600503/full | |||||
