@article{oai:repo.qst.go.jp:00048452,
 author = {J., Mousley P. and W., Burrows C. and J., Ashwin M. and 高橋, 正光 and 佐々木, 拓生 and R., Bell G. and 高橋 正光 and 佐々木 拓生},
 issue = {2},
 journal = {physica status solidi (b)},
 month = {Oct},
 note = {The growth of GaAs on MnSb by molecular beam epitaxy (MBE)  has been investigated. MnSb epilayers on GaAs(111), GaAs(001) and In0.5Ga0.5As(111) of thickness ∼ 50 nm were used as substrates for GaAs films. The MBE growth of GaAs was monitored using synchrotron X-ray diffraction and reflection high energy electron diffraction. The strain relaxation and growth mode of GaAs on MnSb are presented as well as the epitaxial relationship between GaAs and MnSb.},
 pages = {1600503-1--1600503-5},
 title = {In situ X-ray diffraction of GaAs/MnSb/Ga(In)As heterostructures},
 volume = {254},
 year = {2016}
}