{"created":"2023-05-15T14:37:33.698416+00:00","id":48452,"links":{},"metadata":{"_buckets":{"deposit":"9898de1a-d108-450b-968b-170e548ed930"},"_deposit":{"created_by":1,"id":"48452","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"48452"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00048452","sets":["1"]},"author_link":["487151","487152","487147","487150","487153","487154","487149","487148"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2016-10","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"2","bibliographicPageEnd":"1600503-5","bibliographicPageStart":"1600503-1","bibliographicVolumeNumber":"254","bibliographic_titles":[{"bibliographic_title":"physica status solidi (b)"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The growth of GaAs on MnSb by molecular beam epitaxy (MBE)  has been investigated. MnSb epilayers on GaAs(111), GaAs(001) and In0.5Ga0.5As(111) of thickness ∼ 50 nm were used as substrates for GaAs films. The MBE growth of GaAs was monitored using synchrotron X-ray diffraction and reflection high energy electron diffraction. The strain relaxation and growth mode of GaAs on MnSb are presented as well as the epitaxial relationship between GaAs and MnSb.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Wiley"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1002/pssb.201600503","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://onlinelibrary.wiley.com/doi/10.1002/pssb.201600503/full"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://onlinelibrary.wiley.com/doi/10.1002/pssb.201600503/full","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0370-1972","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"J., Mousley P."}],"nameIdentifiers":[{"nameIdentifier":"487147","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"W., Burrows C."}],"nameIdentifiers":[{"nameIdentifier":"487148","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"J., Ashwin M."}],"nameIdentifiers":[{"nameIdentifier":"487149","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋, 正光"}],"nameIdentifiers":[{"nameIdentifier":"487150","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐々木, 拓生"}],"nameIdentifiers":[{"nameIdentifier":"487151","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"R., Bell G."}],"nameIdentifiers":[{"nameIdentifier":"487152","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋 正光","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"487153","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐々木 拓生","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"487154","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"In situ X-ray diffraction of GaAs/MnSb/Ga(In)As heterostructures","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"In situ X-ray diffraction of GaAs/MnSb/Ga(In)As heterostructures"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-02-06"},"publish_date":"2018-02-06","publish_status":"0","recid":"48452","relation_version_is_last":true,"title":["In situ X-ray diffraction of GaAs/MnSb/Ga(In)As heterostructures"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:27:55.996599+00:00"}