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Nitride-MBE system for in situ synchrotron X-ray measurements
https://repo.qst.go.jp/records/47977
https://repo.qst.go.jp/records/47977edbf125f-de16-4428-aa84-ea9c3084a098
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2017-05-23 | |||||
| タイトル | ||||||
| タイトル | Nitride-MBE system for in situ synchrotron X-ray measurements | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
佐々木, 拓生
× 佐々木, 拓生× Ishikawa, Fumitaro× Yamaguchi, Tomohiro× 高橋, 正光× 佐々木 拓生× 高橋 正光 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | A molecular beam epitaxy (MBE) chamber dedicated to nitride growth was developed at the synchrotron radiation facility SPring-8. This chamber has two beryllium windows for incident and outgoing X-rays, and is directly connected to an X-ray diffractometer, enabling in situ synchrotron X-ray measurements during the nitride growth. Experimental results on initial growth dynamics in GaN/SiC, AlN/SiC, and InN/GaN heteroepitaxy were presented. We achieved high-speed and high-sensitivity reciprocal space mapping with a thickness resolution of atomic-layer scale. This in situ measurement using the high-brilliance synchrotron light source will be useful for evaluating structural variations in the initial growth stage of nitride semiconductors. |
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| 書誌情報 |
JAPANESE JOURNAL OF APPLIED PHYSICS 巻 55, 号 5, p. 05FB05, 発行日 2017-02 |
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| 出版者 | ||||||
| 出版者 | IOP Publishing | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.7567/jjap.55.05fb05 | |||||
