{"created":"2023-05-15T14:37:12.922149+00:00","id":47977,"links":{},"metadata":{"_buckets":{"deposit":"3b358416-fff2-4fa2-8df2-984691b2202e"},"_deposit":{"created_by":1,"id":"47977","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"47977"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00047977","sets":["1"]},"author_link":["481622","481618","481621","481620","481619","481617"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2017-02","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"5","bibliographicPageStart":"05FB05","bibliographicVolumeNumber":"55","bibliographic_titles":[{"bibliographic_title":"JAPANESE JOURNAL OF APPLIED PHYSICS"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"A molecular beam epitaxy (MBE) chamber dedicated to nitride growth was developed at the synchrotron radiation facility SPring-8. This chamber\nhas two beryllium windows for incident and outgoing X-rays, and is directly connected to an X-ray diffractometer, enabling in situ synchrotron X-ray\nmeasurements during the nitride growth. Experimental results on initial growth dynamics in GaN/SiC, AlN/SiC, and InN/GaN heteroepitaxy were\npresented. We achieved high-speed and high-sensitivity reciprocal space mapping with a thickness resolution of atomic-layer scale. This in situ\nmeasurement using the high-brilliance synchrotron light source will be useful for evaluating structural variations in the initial growth stage of nitride\nsemiconductors.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP Publishing"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.7567/jjap.55.05fb05","subitem_relation_type_select":"DOI"}}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"佐々木, 拓生"}],"nameIdentifiers":[{"nameIdentifier":"481617","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ishikawa, Fumitaro"}],"nameIdentifiers":[{"nameIdentifier":"481618","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamaguchi, Tomohiro"}],"nameIdentifiers":[{"nameIdentifier":"481619","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋, 正光"}],"nameIdentifiers":[{"nameIdentifier":"481620","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐々木 拓生","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"481621","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋 正光","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"481622","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Nitride-MBE system for in situ synchrotron X-ray measurements","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Nitride-MBE system for in situ synchrotron X-ray measurements"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-05-23"},"publish_date":"2017-05-23","publish_status":"0","recid":"47977","relation_version_is_last":true,"title":["Nitride-MBE system for in situ synchrotron X-ray measurements"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:33:25.776977+00:00"}