@article{oai:repo.qst.go.jp:00047977,
 author = {佐々木, 拓生 and Ishikawa, Fumitaro and Yamaguchi, Tomohiro and 高橋, 正光 and 佐々木 拓生 and 高橋 正光},
 issue = {5},
 journal = {JAPANESE JOURNAL OF APPLIED PHYSICS},
 month = {Feb},
 note = {A molecular beam epitaxy (MBE) chamber dedicated to nitride growth was developed at the synchrotron radiation facility SPring-8. This chamber
has two beryllium windows for incident and outgoing X-rays, and is directly connected to an X-ray diffractometer, enabling in situ synchrotron X-ray
measurements during the nitride growth. Experimental results on initial growth dynamics in GaN/SiC, AlN/SiC, and InN/GaN heteroepitaxy were
presented. We achieved high-speed and high-sensitivity reciprocal space mapping with a thickness resolution of atomic-layer scale. This in situ
measurement using the high-brilliance synchrotron light source will be useful for evaluating structural variations in the initial growth stage of nitride
semiconductors.},
 title = {Nitride-MBE system for in situ synchrotron X-ray measurements},
 volume = {55},
 year = {2017}
}