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Optimum structures for gamma-ray radiation resistant SiC-MOSFETs
https://repo.qst.go.jp/records/47709
https://repo.qst.go.jp/records/477094b2ef2ee-f185-4d95-8e5d-e96e868c4f06
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2017-04-19 | |||||
| タイトル | ||||||
| タイトル | Optimum structures for gamma-ray radiation resistant SiC-MOSFETs | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Mitomo, Satoshi
× Mitomo, Satoshi× Matsuda, Takuma× Murata, Koichi× Yokoseki, Takashi× Makino, Takahiro× Takeyama, Akinori× Onoda, Shinobu× Oshima, Takeshi× Okubo, Shuichi× Tanaka, Yuki× Kandori, Mikio× Yoshie, Toru× Hijikata, Yasuto× 三友 啓× 松田 拓磨× 村田 航一× 牧野 高紘× 武山 昭憲× 小野田 忍× 大島 武 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | In order to develop highly radiation-tolerant SiC MOSFETs, we investigated the dependence of the gamma-ray radiation response on the gate oxide thickness and nitridation processes, used for oxide growth and p-well implantation. SiC MOSFETs with a thick gate oxide (60 nm) showed a rapid decrease in the threshold voltage shift ⊿Vth of more than 400 kGy, and transitioned to the normally-on state at lower doses than those with a thin gate oxide (35 nm). The MOSFETs with gate oxides treated with lower concentrations of N2O (10%) demonstrated a higher radiation tolerance (⊿Vth, channel mobility, and subthreshold swing) than with a 100% N2O treatment. The MOSFETs with more p-well implantation steps (three steps) showed a smaller negative shift of the threshold voltage relative to those implanted with two steps. | |||||
| 書誌情報 |
Phys. Status Solidi A 巻 214, 号 4, p. 1600425-1-1600425-7, 発行日 2017-02 |
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| 出版者 | ||||||
| 出版者 | WILEY-VCH Verlag GmbH & Co. | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1002/pssa.201600425 | |||||
