WEKO3
アイテム
Optimum structures for gamma-ray radiation resistant SiC-MOSFETs
https://repo.qst.go.jp/records/47709
https://repo.qst.go.jp/records/477094b2ef2ee-f185-4d95-8e5d-e96e868c4f06
Item type | 学術雑誌論文 / Journal Article(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2017-04-19 | |||||
タイトル | ||||||
タイトル | Optimum structures for gamma-ray radiation resistant SiC-MOSFETs | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Mitomo, Satoshi
× Mitomo, Satoshi× Matsuda, Takuma× Murata, Koichi× Yokoseki, Takashi× Makino, Takahiro× Takeyama, Akinori× Onoda, Shinobu× Oshima, Takeshi× Okubo, Shuichi× Tanaka, Yuki× Kandori, Mikio× Yoshie, Toru× Hijikata, Yasuto× 三友 啓× 松田 拓磨× 村田 航一× 牧野 高紘× 武山 昭憲× 小野田 忍× 大島 武 |
|||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | In order to develop highly radiation-tolerant SiC MOSFETs, we investigated the dependence of the gamma-ray radiation response on the gate oxide thickness and nitridation processes, used for oxide growth and p-well implantation. SiC MOSFETs with a thick gate oxide (60 nm) showed a rapid decrease in the threshold voltage shift ⊿Vth of more than 400 kGy, and transitioned to the normally-on state at lower doses than those with a thin gate oxide (35 nm). The MOSFETs with gate oxides treated with lower concentrations of N2O (10%) demonstrated a higher radiation tolerance (⊿Vth, channel mobility, and subthreshold swing) than with a 100% N2O treatment. The MOSFETs with more p-well implantation steps (three steps) showed a smaller negative shift of the threshold voltage relative to those implanted with two steps. | |||||
書誌情報 |
Phys. Status Solidi A 巻 214, 号 4, p. 1600425-1-1600425-7, 発行日 2017-02 |
|||||
出版者 | ||||||
出版者 | WILEY-VCH Verlag GmbH & Co. | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1002/pssa.201600425 |