@article{oai:repo.qst.go.jp:00047709,
 author = {Mitomo, Satoshi and Matsuda, Takuma and Murata, Koichi and Yokoseki, Takashi and Makino, Takahiro and Takeyama, Akinori and Onoda, Shinobu and Oshima, Takeshi and Okubo, Shuichi and Tanaka, Yuki and Kandori, Mikio and Yoshie, Toru and Hijikata, Yasuto and 三友 啓 and 松田 拓磨 and 村田 航一 and 牧野 高紘 and 武山 昭憲 and 小野田 忍 and 大島 武},
 issue = {4},
 journal = {Phys. Status Solidi A},
 month = {Feb},
 note = {In order to develop highly radiation-tolerant SiC MOSFETs, we investigated the dependence of the gamma-ray radiation response on the gate oxide thickness and nitridation processes, used for oxide growth and p-well implantation. SiC MOSFETs with a thick gate oxide (60 nm) showed a rapid decrease in the threshold voltage shift ⊿Vth of more than 400 kGy, and transitioned to the normally-on state at lower doses than those with a thin gate oxide (35 nm). The MOSFETs with gate oxides treated with lower concentrations of N2O (10%) demonstrated a higher radiation tolerance (⊿Vth, channel mobility, and subthreshold swing) than with a 100% N2O treatment. The MOSFETs with more p-well implantation steps (three steps) showed a smaller negative shift of the threshold voltage relative to those implanted with two steps.},
 pages = {1600425-1--1600425-7},
 title = {Optimum structures for gamma-ray radiation resistant SiC-MOSFETs},
 volume = {214},
 year = {2017}
}