{"created":"2023-05-15T14:37:01.193913+00:00","id":47709,"links":{},"metadata":{"_buckets":{"deposit":"911e1f1f-8e6b-4318-bec9-329644e67894"},"_deposit":{"created_by":1,"id":"47709","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"47709"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00047709","sets":["1"]},"author_link":["478744","478751","478749","478752","478736","478740","478743","478753","478754","478755","478739","478738","478742","478745","478737","478750","478747","478741","478748","478746"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2017-02","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"4","bibliographicPageEnd":"1600425-7","bibliographicPageStart":"1600425-1","bibliographicVolumeNumber":"214","bibliographic_titles":[{"bibliographic_title":"Phys. Status Solidi A"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"  In order to develop highly radiation-tolerant SiC MOSFETs, we investigated the dependence of the gamma-ray radiation response on the gate oxide thickness and nitridation processes, used for oxide growth and p-well implantation. SiC MOSFETs with a thick gate oxide (60 nm) showed a rapid decrease in the threshold voltage shift ⊿Vth of more than 400 kGy, and transitioned to the normally-on state at lower doses than those with a thin gate oxide (35 nm). The MOSFETs with gate oxides treated with lower concentrations of N2O (10%) demonstrated a higher radiation tolerance (⊿Vth, channel mobility, and subthreshold swing) than with a 100% N2O treatment. The MOSFETs with more p-well implantation steps (three steps) showed a smaller negative shift of the threshold voltage relative to those implanted with two steps.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"WILEY-VCH Verlag GmbH & Co."}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1002/pssa.201600425","subitem_relation_type_select":"DOI"}}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Mitomo, Satoshi"}],"nameIdentifiers":[{"nameIdentifier":"478736","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Matsuda, Takuma"}],"nameIdentifiers":[{"nameIdentifier":"478737","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Murata, Koichi"}],"nameIdentifiers":[{"nameIdentifier":"478738","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yokoseki, Takashi"}],"nameIdentifiers":[{"nameIdentifier":"478739","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Makino, Takahiro"}],"nameIdentifiers":[{"nameIdentifier":"478740","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeyama, Akinori"}],"nameIdentifiers":[{"nameIdentifier":"478741","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Onoda, Shinobu"}],"nameIdentifiers":[{"nameIdentifier":"478742","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Oshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"478743","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Okubo, Shuichi"}],"nameIdentifiers":[{"nameIdentifier":"478744","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tanaka, Yuki"}],"nameIdentifiers":[{"nameIdentifier":"478745","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kandori, Mikio"}],"nameIdentifiers":[{"nameIdentifier":"478746","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yoshie, Toru"}],"nameIdentifiers":[{"nameIdentifier":"478747","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hijikata, Yasuto"}],"nameIdentifiers":[{"nameIdentifier":"478748","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"三友 啓","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"478749","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"松田 拓磨","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"478750","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"村田 航一","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"478751","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野 高紘","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"478752","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"武山 昭憲","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"478753","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"小野田 忍","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"478754","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"478755","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Optimum structures for gamma-ray radiation resistant SiC-MOSFETs","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Optimum structures for gamma-ray radiation resistant SiC-MOSFETs"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-04-19"},"publish_date":"2017-04-19","publish_status":"0","recid":"47709","relation_version_is_last":true,"title":["Optimum structures for gamma-ray radiation resistant SiC-MOSFETs"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:36:25.185943+00:00"}