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Effect of gamma-ray irradiation on the device processinduced defects in 4H-SiC epilayers
https://repo.qst.go.jp/records/47701
https://repo.qst.go.jp/records/477017721e9b6-199a-4cd2-8a8d-e424b24c68a1
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2017-04-18 | |||||
| タイトル | ||||||
| タイトル | Effect of gamma-ray irradiation on the device processinduced defects in 4H-SiC epilayers | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
宮崎, 寿基
× 宮崎, 寿基× 牧野, 高紘× 武山, 昭憲× 小野田, 忍× 大島, 武× 田中, 雄季× 神取, 幹朗× 吉江, 徹× 土方, 泰斗× 牧野 高紘× 武山 昭憲× 小野田 忍× 大島 武 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We investigated the gamma-ray irradiation effect on 4H-SiC device process-induced defects by photoluminescence (PL) imaging and deep level transient spectroscopy (DLTS). We found that basal plane dislocations (BPDs) that were present before the irradiation were eliminated by gamma-ray irradiation of 1 MGy. The reduction mechanism of BPD was discussed in terms of BPD-threading edge dislocation (TED) transformation and shrinkage of stacking faults. In addition, the entire PL image was gradually darkened with increasing absorbed dose, which is presumably due to the point defects generated by gamma-ray irradiation. We obtained DLTS peaks that could be assigned to complex defects, termed RD series, and found that the peaks increased with absorbed dose. |
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| 書誌情報 |
Superlattices and Microstructures 巻 99, p. 197-201, 発行日 2016-11 |
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| 出版者 | ||||||
| 出版者 | Elsevier | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1016/j.spmi.2016.03.005 | |||||
