@article{oai:repo.qst.go.jp:00047701,
 author = {宮崎, 寿基 and 牧野, 高紘 and 武山, 昭憲 and 小野田, 忍 and 大島, 武 and 田中, 雄季 and 神取, 幹朗 and 吉江, 徹 and 土方, 泰斗 and 牧野 高紘 and 武山 昭憲 and 小野田 忍 and 大島 武},
 journal = {Superlattices and Microstructures},
 month = {Nov},
 note = {We investigated the gamma-ray irradiation effect on 4H-SiC device process-induced defects by photoluminescence (PL) imaging and deep level transient spectroscopy (DLTS). We found that basal plane dislocations (BPDs) that were present before the irradiation were eliminated by gamma-ray irradiation of 1 MGy. The reduction mechanism of BPD was discussed in terms of BPD-threading edge dislocation (TED) transformation and shrinkage of stacking faults. In addition, the entire PL image was gradually darkened with increasing
absorbed dose, which is presumably due to the point defects generated by gamma-ray irradiation. We obtained DLTS peaks that could be assigned to complex defects, termed RD series, and found that the peaks increased with absorbed dose.},
 pages = {197--201},
 title = {Effect of gamma-ray irradiation on the device processinduced defects in 4H-SiC epilayers},
 volume = {99},
 year = {2016}
}