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X-ray photoelectron spectroscopy studies on single crystalline beta-FeSi2
https://repo.qst.go.jp/records/47588
https://repo.qst.go.jp/records/47588b7fabb33-4d90-4f2f-b135-c754d5dffea3
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2016-12-08 | |||||
| タイトル | ||||||
| タイトル | X-ray photoelectron spectroscopy studies on single crystalline beta-FeSi2 | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Mao, Wei
× Mao, Wei× Udono, Haruhiko× Yamaguchi, Kenji× Terai, Takayuki× Matsuzaki, Hiroyuki× 山口 憲司 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | In order to realize the photoluminescence of semiconducting beta-FeSi2 homoepitaxial films, surface preparation of single crystalline beta-FeSi2 is of critical importance. An atomically flat and clean substrate surface of beta-FeSi2 was prepared by sputtering with 2 keV Ar+ ions or by heating at 850 degrees C. The structure of the native surface oxide and the removal of this layer were investigated though X-ray photoelectron spectroscopy measurements. No significant deviation from the stoichiometric composition was detected in the surface region. Our results suggest that a surface prepared in this way is an eligible substrate for homoepitaxy of beta-FeSi2. | |||||
| 書誌情報 |
Thin Solid Films 巻 606, p. 1-6, 発行日 2016-05 |
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| 出版者 | ||||||
| 出版者 | Elsevier B. V. | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0040-6090 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1016/j.tsf.2016.03.023 | |||||
