@article{oai:repo.qst.go.jp:00047588,
 author = {Mao, Wei and Udono, Haruhiko and Yamaguchi, Kenji and Terai, Takayuki and Matsuzaki, Hiroyuki and 山口 憲司},
 journal = {Thin Solid Films},
 month = {May},
 note = {In order to realize the photoluminescence of semiconducting beta-FeSi2 homoepitaxial films, surface preparation of single crystalline beta-FeSi2 is of critical importance.  An atomically flat and clean substrate surface of beta-FeSi2 was prepared by sputtering with 2 keV Ar+ ions or by heating at 850 degrees C.  The structure of the native surface oxide and the removal of this layer were investigated though X-ray photoelectron spectroscopy measurements.  No significant deviation from the stoichiometric composition was detected in the surface region.  Our results suggest that a surface prepared in this way is an eligible substrate for homoepitaxy of beta-FeSi2.},
 pages = {1--6},
 title = {X-ray photoelectron spectroscopy studies on single crystalline beta-FeSi2},
 volume = {606},
 year = {2016}
}