{"created":"2023-05-15T14:36:55.851480+00:00","id":47588,"links":{},"metadata":{"_buckets":{"deposit":"fb3f3972-4b26-44b6-bdff-c3d47bce22f8"},"_deposit":{"created_by":1,"id":"47588","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"47588"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00047588","sets":["1"]},"author_link":["476962","476965","476966","476967","476963","476964"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2016-05","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"6","bibliographicPageStart":"1","bibliographicVolumeNumber":"606","bibliographic_titles":[{"bibliographic_title":"Thin Solid Films"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"In order to realize the photoluminescence of semiconducting beta-FeSi2 homoepitaxial films, surface preparation of single crystalline beta-FeSi2 is of critical importance.  An atomically flat and clean substrate surface of beta-FeSi2 was prepared by sputtering with 2 keV Ar+ ions or by heating at 850 degrees C.  The structure of the native surface oxide and the removal of this layer were investigated though X-ray photoelectron spectroscopy measurements.  No significant deviation from the stoichiometric composition was detected in the surface region.  Our results suggest that a surface prepared in this way is an eligible substrate for homoepitaxy of beta-FeSi2.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier B. V. "}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1016/j.tsf.2016.03.023","subitem_relation_type_select":"DOI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0040-6090","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Mao, Wei"}],"nameIdentifiers":[{"nameIdentifier":"476962","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Udono, Haruhiko"}],"nameIdentifiers":[{"nameIdentifier":"476963","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamaguchi, Kenji"}],"nameIdentifiers":[{"nameIdentifier":"476964","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Terai, Takayuki"}],"nameIdentifiers":[{"nameIdentifier":"476965","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Matsuzaki, Hiroyuki"}],"nameIdentifiers":[{"nameIdentifier":"476966","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山口 憲司","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"476967","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"X-ray photoelectron spectroscopy studies on single crystalline beta-FeSi2","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"X-ray photoelectron spectroscopy studies on single crystalline beta-FeSi2"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2016-12-08"},"publish_date":"2016-12-08","publish_status":"0","recid":"47588","relation_version_is_last":true,"title":["X-ray photoelectron spectroscopy studies on single crystalline beta-FeSi2"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:37:55.507640+00:00"}