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Growth of single-phase nanostructured Er2O3 thin films on Si (100) by ion beam sputter deposition
https://repo.qst.go.jp/records/47584
https://repo.qst.go.jp/records/47584854aa747-aa73-42e6-83df-869dcf3cec05
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2016-10-26 | |||||
| タイトル | ||||||
| タイトル | Growth of single-phase nanostructured Er2O3 thin films on Si (100) by ion beam sputter deposition | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Mao, Wei
× Mao, Wei× Fujita, Masaya× Chikada, Takumi× Yamaguchi, Kenji× Suzuki, Akihiro× Terai, Takayuki× Matsuzaki, Hiroyuki× 山口 憲司 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Single-phase nanocrystalline thin films of Er2O3 (440) was fabricated on Si (100) substrates by means of ion beam sputter deposition method for the first time, at 973 K and in-situ thermal annealing at 1,023 K. Er silicides formed during the deposition were eliminated via the annealing, which resulted in the single phase and the smooth surface of the Er2O3 thin films. The epitaxial relationship between Si (100) and Er2O3 (110) is clarified by X-ray diffraction and reflection high energy electron diffraction (RHEED). | |||||
| 書誌情報 |
Surface & Coatings Technology 巻 283, p. 241-246, 発行日 2015-12 |
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| 出版者 | ||||||
| 出版者 | Elsevier B.V. | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1016/j.surfcoat.2015.10.060 | |||||
