{"created":"2023-05-15T14:36:55.676702+00:00","id":47584,"links":{},"metadata":{"_buckets":{"deposit":"6c51460e-9dd6-4d36-9437-37bbae7fa47a"},"_deposit":{"created_by":1,"id":"47584","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"47584"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00047584","sets":["1"]},"author_link":["476936","476933","476935","476940","476934","476939","476937","476938"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2015-12","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"246","bibliographicPageStart":"241","bibliographicVolumeNumber":"283","bibliographic_titles":[{"bibliographic_title":"Surface & Coatings Technology"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Single-phase nanocrystalline thin films of Er2O3 (440) was fabricated on Si (100) substrates by means of ion beam sputter deposition method for the first time, at 973 K and in-situ thermal annealing at 1,023 K.  Er silicides formed during the deposition were eliminated via the annealing, which resulted in the single phase and the smooth surface of the Er2O3 thin films.  The epitaxial relationship between Si (100) and Er2O3 (110) is clarified by X-ray diffraction and reflection high energy electron diffraction (RHEED). ","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier B.V."}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1016/j.surfcoat.2015.10.060","subitem_relation_type_select":"DOI"}}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Mao, Wei"}],"nameIdentifiers":[{"nameIdentifier":"476933","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Fujita, Masaya"}],"nameIdentifiers":[{"nameIdentifier":"476934","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Chikada, Takumi"}],"nameIdentifiers":[{"nameIdentifier":"476935","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamaguchi, Kenji"}],"nameIdentifiers":[{"nameIdentifier":"476936","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Suzuki, Akihiro"}],"nameIdentifiers":[{"nameIdentifier":"476937","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Terai, Takayuki"}],"nameIdentifiers":[{"nameIdentifier":"476938","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Matsuzaki, Hiroyuki"}],"nameIdentifiers":[{"nameIdentifier":"476939","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山口 憲司","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"476940","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Growth of single-phase nanostructured Er2O3 thin films on Si (100) by ion beam sputter deposition","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Growth of single-phase nanostructured Er2O3 thin films on Si (100) by ion beam sputter deposition"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2016-10-26"},"publish_date":"2016-10-26","publish_status":"0","recid":"47584","relation_version_is_last":true,"title":["Growth of single-phase nanostructured Er2O3 thin films on Si (100) by ion beam sputter deposition"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:37:58.291190+00:00"}