@article{oai:repo.qst.go.jp:00047584,
 author = {Mao, Wei and Fujita, Masaya and Chikada, Takumi and Yamaguchi, Kenji and Suzuki, Akihiro and Terai, Takayuki and Matsuzaki, Hiroyuki and 山口 憲司},
 journal = {Surface & Coatings Technology},
 month = {Dec},
 note = {Single-phase nanocrystalline thin films of Er2O3 (440) was fabricated on Si (100) substrates by means of ion beam sputter deposition method for the first time, at 973 K and in-situ thermal annealing at 1,023 K.  Er silicides formed during the deposition were eliminated via the annealing, which resulted in the single phase and the smooth surface of the Er2O3 thin films.  The epitaxial relationship between Si (100) and Er2O3 (110) is clarified by X-ray diffraction and reflection high energy electron diffraction (RHEED).},
 pages = {241--246},
 title = {Growth of single-phase nanostructured Er2O3 thin films on Si (100) by ion beam sputter deposition},
 volume = {283},
 year = {2015}
}