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Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs
https://repo.qst.go.jp/records/76553
https://repo.qst.go.jp/records/7655380fb2c42-d521-438f-a796-f31eebc909f6
Item type | 会議発表論文 / Conference Paper(1) | |||||
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公開日 | 2019-08-23 | |||||
タイトル | ||||||
タイトル | Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
資源タイプ | conference paper | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Ishii, Tomoyasu
× Ishii, Tomoyasu× Shin-Ichiro, Kuroki× Sezaki, Hiroshi× Ishikawa, Seiji× Maeda, Tomonori× Makino, Takahiro× Ohshima, Takeshi× Mikael, Östling× Carl-Mikael, Zetterling× Takahiro, Makino× Takeshi, Ohshima |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Sub-micron 4H-SiC MOSFETs are attractive for high frequency operation of 4H-SiC integrated circuits. However, the short channel effects would be induced at the short-channel devices. In this paper, short channel effects were investigated with planar and trench 4H-SiC MOSFETs, and the suppression of the short channel effect with the trench structure was achieved. |
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書誌情報 |
Materials Science Forum 巻 963, p. 613-616, 発行日 2019-07 |
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出版者 | ||||||
出版者 | Trans Tech Publications | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1662-9752 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.4028/www.scientific.net/MSF.963.613 | |||||
関連サイト | ||||||
識別子タイプ | URI | |||||
関連識別子 | https://www.scientific.net |