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Purcell Enhancement of Near Infrared Photoluminescence from Nd-doped GaN Photonic Crystal L3 Cavity
https://repo.qst.go.jp/records/86357
https://repo.qst.go.jp/records/86357476ddf3c-1667-40b7-983d-b9de73fbfcbb
Item type | 会議発表用資料 / Presentation(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2022-06-21 | |||||
タイトル | ||||||
タイトル | Purcell Enhancement of Near Infrared Photoluminescence from Nd-doped GaN Photonic Crystal L3 Cavity | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
資源タイプ | conference object | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
佐藤, 真一郎
× 佐藤, 真一郎× Oto, Takao× Shinichiro, Sato |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Neodymium (Nd)-doped GaN (Nd:GaN) exhibits near infrared (NIR) emission that is temperature insensitive, sharp and stable. Additionally, such materials utilize well-developed GaN platform, enabling integration into more complex devices and the photon emission can be electrically controlled (J.H. Kim, P.H. Holloway, Adv. Mater. 17 (2005) 91-96.). These superior optical and opto-electronic properties are also suitable for single photon source (SPS) which is a key technology for quantum computing and quantum key distribution. However, the photon emission rate enhancement is required to optically detect isolated single Nd ions toward the realization of Nd:GaN SPS. Here we report the photon emission rate enhancement of Nd ions in GaN coupled to photonic crystal L3 cavity based on the Purcell effect. | |||||
会議概要(会議名, 開催地, 会期, 主催者等) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Defects in solids for quantum technologies(DSQT) | |||||
発表年月日 | ||||||
日付 | 2022-06-17 | |||||
日付タイプ | Issued |