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{"_buckets": {"deposit": "0fa286a0-abfa-4021-bc90-4a3180801cc0"}, "_deposit": {"created_by": 1, "id": "80477", "owners": [1], "pid": {"revision_id": 0, "type": "depid", "value": "80477"}, "status": "published"}, "_oai": {"id": "oai:repo.qst.go.jp:00080477", "sets": ["1"]}, "author_link": ["907341", "907343", "907338", "907335", "907345", "907344", "907337", "907342", "907334", "907336", "907346", "907340", "907339"], "item_8_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2020-07", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "360", "bibliographicPageStart": "355", "bibliographicVolumeNumber": "1004", "bibliographic_titles": [{"bibliographic_title": "Materials Science Forum"}]}]}, "item_8_description_5": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "This paper reports optical properties of negatively charged NcVsi- centers in silicon carbide (a nitrogen substituting for a carbon atom adjacent to a silicon vacancy) whose emission wavelength is 1100-1500 nm at room temperature. High-purity semi-insulating (HPSI) 4H-SiCs are implanted with high energy N ion beams and subsequently thermally annealed to form NcVsi- centers. We investigated a wide range of N ion implantation dose using a micro ion beam implantation technique and observed the photoluminescence intensity from the SiC-NV centers. We show that under conditions of heavy implantation, the excitation laser power excites residual defects and their fluorescences interferes with the emission from the NcVsi- centers. These results allow us to clarify\nthe requirements to optically detect isolated single NcVsi- centers at lightly implanted conditions.", "subitem_description_type": "Abstract"}]}, "item_8_publisher_8": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "Trans Tech Publications"}]}, "item_8_relation_14": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "10.4028/www.scientific.net/MSF.1004.355", "subitem_relation_type_select": "DOI"}}]}, "item_8_relation_17": {"attribute_name": "関連サイト", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "https://www.scientific.net/MSF.1004.355", "subitem_relation_type_select": "URI"}}]}, "item_8_source_id_9": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "1662-9752", "subitem_source_identifier_type": "ISSN"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "metadata only access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_14cb"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Sato, Shinichiro"}], "nameIdentifiers": [{"nameIdentifier": "907334", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Narahara, Takuma"}], "nameIdentifiers": [{"nameIdentifier": "907335", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Onoda, Shinobu"}], "nameIdentifiers": [{"nameIdentifier": "907336", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yamazaki, Yuichi"}], "nameIdentifiers": [{"nameIdentifier": "907337", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hijikata, Yasuto"}], "nameIdentifiers": [{"nameIdentifier": "907338", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "C. Gibson, Brant"}], "nameIdentifiers": [{"nameIdentifier": "907339", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "D. Greentree, Andrew"}], "nameIdentifiers": [{"nameIdentifier": "907340", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ohshima, Takeshi"}], "nameIdentifiers": [{"nameIdentifier": "907341", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sato, Shinichiro", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "907342", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Narahara, Takuma", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "907343", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Onoda, Shinobu", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "907344", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yamazaki, Yuichi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "907345", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ohshima, Takeshi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "907346", "nameIdentifierScheme": "WEKO"}]}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Near Infrared Photoluminescence of NCVSi- Centers in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Near Infrared Photoluminescence of NCVSi- Centers in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles"}]}, "item_type_id": "8", "owner": "1", "path": ["1"], "permalink_uri": "https://repo.qst.go.jp/records/80477", "pubdate": {"attribute_name": "公開日", "attribute_value": "2020-09-11"}, "publish_date": "2020-09-11", "publish_status": "0", "recid": "80477", "relation": {}, "relation_version_is_last": true, "title": ["Near Infrared Photoluminescence of NCVSi- Centers in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles"], "weko_shared_id": -1}
Near Infrared Photoluminescence of NCVSi- Centers in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles
https://repo.qst.go.jp/records/80477
https://repo.qst.go.jp/records/804777873158f-cfeb-4387-b83d-d7c2ea8c2f1a
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2020-09-11 | |||||
タイトル | ||||||
タイトル | Near Infrared Photoluminescence of NCVSi- Centers in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Sato, Shinichiro
× Sato, Shinichiro× Narahara, Takuma× Onoda, Shinobu× Yamazaki, Yuichi× Hijikata, Yasuto× C. Gibson, Brant× D. Greentree, Andrew× Ohshima, Takeshi× Sato, Shinichiro× Narahara, Takuma× Onoda, Shinobu× Yamazaki, Yuichi× Ohshima, Takeshi |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | This paper reports optical properties of negatively charged NcVsi- centers in silicon carbide (a nitrogen substituting for a carbon atom adjacent to a silicon vacancy) whose emission wavelength is 1100-1500 nm at room temperature. High-purity semi-insulating (HPSI) 4H-SiCs are implanted with high energy N ion beams and subsequently thermally annealed to form NcVsi- centers. We investigated a wide range of N ion implantation dose using a micro ion beam implantation technique and observed the photoluminescence intensity from the SiC-NV centers. We show that under conditions of heavy implantation, the excitation laser power excites residual defects and their fluorescences interferes with the emission from the NcVsi- centers. These results allow us to clarify the requirements to optically detect isolated single NcVsi- centers at lightly implanted conditions. |
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書誌情報 |
Materials Science Forum 巻 1004, p. 355-360, 発行日 2020-07 |
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出版者 | ||||||
出版者 | Trans Tech Publications | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1662-9752 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.4028/www.scientific.net/MSF.1004.355 | |||||
関連サイト | ||||||
識別子タイプ | URI | |||||
関連識別子 | https://www.scientific.net/MSF.1004.355 |