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Near Infrared Photoluminescence of NCVSi- Centers in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles
https://repo.qst.go.jp/records/80477
https://repo.qst.go.jp/records/804777873158f-cfeb-4387-b83d-d7c2ea8c2f1a
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2020-09-11 | |||||
| タイトル | ||||||
| タイトル | Near Infrared Photoluminescence of NCVSi- Centers in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Sato, Shinichiro
× Sato, Shinichiro× Narahara, Takuma× Onoda, Shinobu× Yamazaki, Yuichi× Hijikata, Yasuto× C. Gibson, Brant× D. Greentree, Andrew× Ohshima, Takeshi× Sato, Shinichiro× Narahara, Takuma× Onoda, Shinobu× Yamazaki, Yuichi× Ohshima, Takeshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | This paper reports optical properties of negatively charged NcVsi- centers in silicon carbide (a nitrogen substituting for a carbon atom adjacent to a silicon vacancy) whose emission wavelength is 1100-1500 nm at room temperature. High-purity semi-insulating (HPSI) 4H-SiCs are implanted with high energy N ion beams and subsequently thermally annealed to form NcVsi- centers. We investigated a wide range of N ion implantation dose using a micro ion beam implantation technique and observed the photoluminescence intensity from the SiC-NV centers. We show that under conditions of heavy implantation, the excitation laser power excites residual defects and their fluorescences interferes with the emission from the NcVsi- centers. These results allow us to clarify the requirements to optically detect isolated single NcVsi- centers at lightly implanted conditions. |
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| 書誌情報 |
Materials Science Forum 巻 1004, p. 355-360, 発行日 2020-07 |
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| 出版者 | ||||||
| 出版者 | Trans Tech Publications | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 1662-9752 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.4028/www.scientific.net/MSF.1004.355 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://www.scientific.net/MSF.1004.355 | |||||
