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アイテム
Ga2O3 power transistors: The promise, the reality, and future directions
https://repo.qst.go.jp/records/74800
https://repo.qst.go.jp/records/74800a5997b3b-a27d-46db-a152-7e9e8d1dcdbd
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-03-17 | |||||
| タイトル | ||||||
| タイトル | Ga2O3 power transistors: The promise, the reality, and future directions | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Hoi Wong, Man
× Hoi Wong, Man× Nakata, Yoshiaki× Chia-Hung, Lin× Sasaki, Kohei× Morikawa, Yoji× Goto, Ken× Takeyama, Akinori× Makino, Takahiro× Ohshima, Takeshi× Kuramata, Akito× Yamakoshi, Shigenobu× Murakami, Hisashi× Kumagai, Yoshinao× Higashiwaki, Masataka× Takeyama, Akinori× Makino, Takahiro× Ohshima, Takeshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The pursuit of Ga2O3 as an ultra-wide-bandgap (4.5–4.9 eV) semiconductor for next-generation power-switching and harsh-environment electronics has catalyzed the rapid development of Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) in recent years. Field-plated lateral depletion-mode devices demonstrated a high off-state breakdown voltage of 755 V, a large on/off current ratio of over nine orders of magnitude, dispersion-free output characteristics, stable high temperature operation, and strong gamma-ray tolerance. Enhancement-mode operation with a six-order-of-magnitude on/off current ratio was enabled by an unintentionally-doped epitaxial Ga2O3 channel that was fully depleted at zero gate bias due to a low background carrier density. Planar-gate vertical Ga2O3 MOSFETs, wherein a current blocking layer provided electrical isolation between source and drain except at an aperture opening through which drain current was conducted, demonstrated successful transistor action. Advanced transistor architectures, notably normally-off vertical devices, will further enhance the impact of Ga2O3 power electronics. |
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| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | he 2018 E-MRS Fall Meeting | |||||
| 発表年月日 | ||||||
| 日付 | 2018-09-20 | |||||
| 日付タイプ | Issued | |||||
