{"created":"2023-05-15T14:55:02.155326+00:00","id":74800,"links":{},"metadata":{"_buckets":{"deposit":"f6abca91-e85e-4aa9-b87a-9ac7b51a3543"},"_deposit":{"created_by":1,"id":"74800","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"74800"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00074800","sets":["10:27"]},"author_link":["737868","737862","737867","737874","737863","737859","737860","737864","737872","737875","737870","737873","737861","737865","737866","737869","737871"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2018-09-20","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The pursuit of Ga2O3 as an ultra-wide-bandgap (4.5–4.9 eV) semiconductor for next-generation power-switching and harsh-environment electronics has catalyzed the rapid development of\nGa2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) in recent years. Field-plated lateral depletion-mode devices demonstrated a high off-state breakdown voltage of 755 V, a large on/off current ratio of over nine orders of magnitude, dispersion-free output characteristics, stable high temperature operation, and strong gamma-ray tolerance. Enhancement-mode operation with a six-order-of-magnitude on/off current ratio was enabled by an unintentionally-doped epitaxial Ga2O3 channel that was fully depleted at zero gate bias due to a low background carrier density. Planar-gate vertical Ga2O3 MOSFETs, wherein a current blocking layer provided electrical isolation between source and drain except at an aperture opening through which drain current was conducted, demonstrated successful transistor action. Advanced transistor architectures, notably normally-off vertical devices, will further enhance the impact of Ga2O3 power electronics.","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"he 2018 E-MRS Fall Meeting","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hoi Wong, Man"}],"nameIdentifiers":[{"nameIdentifier":"737859","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nakata, Yoshiaki"}],"nameIdentifiers":[{"nameIdentifier":"737860","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Chia-Hung, Lin"}],"nameIdentifiers":[{"nameIdentifier":"737861","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sasaki, Kohei"}],"nameIdentifiers":[{"nameIdentifier":"737862","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Morikawa, Yoji"}],"nameIdentifiers":[{"nameIdentifier":"737863","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Goto, Ken"}],"nameIdentifiers":[{"nameIdentifier":"737864","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeyama, Akinori"}],"nameIdentifiers":[{"nameIdentifier":"737865","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Makino, Takahiro"}],"nameIdentifiers":[{"nameIdentifier":"737866","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"737867","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kuramata, Akito"}],"nameIdentifiers":[{"nameIdentifier":"737868","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamakoshi, Shigenobu"}],"nameIdentifiers":[{"nameIdentifier":"737869","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Murakami, Hisashi"}],"nameIdentifiers":[{"nameIdentifier":"737870","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kumagai, Yoshinao"}],"nameIdentifiers":[{"nameIdentifier":"737871","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Higashiwaki, Masataka"}],"nameIdentifiers":[{"nameIdentifier":"737872","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeyama, Akinori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"737873","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Makino, Takahiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"737874","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"737875","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"Ga2O3 power transistors: The promise, the reality, and future directions","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Ga2O3 power transistors: The promise, the reality, and future directions"}]},"item_type_id":"10005","owner":"1","path":["27"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-03-17"},"publish_date":"2019-03-17","publish_status":"0","recid":"74800","relation_version_is_last":true,"title":["Ga2O3 power transistors: The promise, the reality, and future directions"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-16T07:43:41.872979+00:00"}