@misc{oai:repo.qst.go.jp:00074800,
 author = {Hoi Wong, Man and Nakata, Yoshiaki and Chia-Hung, Lin and Sasaki, Kohei and Morikawa, Yoji and Goto, Ken and Takeyama, Akinori and Makino, Takahiro and Ohshima, Takeshi and Kuramata, Akito and Yamakoshi, Shigenobu and Murakami, Hisashi and Kumagai, Yoshinao and Higashiwaki, Masataka and Takeyama, Akinori and Makino, Takahiro and Ohshima, Takeshi},
 month = {Sep},
 note = {The pursuit of Ga2O3 as an ultra-wide-bandgap (4.5–4.9 eV) semiconductor for next-generation power-switching and harsh-environment electronics has catalyzed the rapid development of
Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) in recent years. Field-plated lateral depletion-mode devices demonstrated a high off-state breakdown voltage of 755 V, a large on/off current ratio of over nine orders of magnitude, dispersion-free output characteristics, stable high temperature operation, and strong gamma-ray tolerance. Enhancement-mode operation with a six-order-of-magnitude on/off current ratio was enabled by an unintentionally-doped epitaxial Ga2O3 channel that was fully depleted at zero gate bias due to a low background carrier density. Planar-gate vertical Ga2O3 MOSFETs, wherein a current blocking layer provided electrical isolation between source and drain except at an aperture opening through which drain current was conducted, demonstrated successful transistor action. Advanced transistor architectures, notably normally-off vertical devices, will further enhance the impact of Ga2O3 power electronics., he 2018 E-MRS Fall Meeting},
 title = {Ga2O3 power transistors: The promise, the reality, and future directions},
 year = {2018}
}