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Simulation of statistical effects in exposure and development of EUV photoresists using the percolation and diffusion limited aggregation model.
https://repo.qst.go.jp/records/73151
https://repo.qst.go.jp/records/73151b218f1da-5b7b-4f4f-9587-89c221880b2f
Item type | 会議発表用資料 / Presentation(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2019-01-17 | |||||
タイトル | ||||||
タイトル | Simulation of statistical effects in exposure and development of EUV photoresists using the percolation and diffusion limited aggregation model. | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
資源タイプ | conference object | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
佐々木, 明
× 佐々木, 明× 佐々木 明 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Resolution, line-edge roughness (LWR), and sensitivity of photoresists have an essential importance for the realization of the extreme ultraviolet (EUV) lithography. We show the image formation of photoresists for the extreme-ultraviolet lithography (EUV) using computer simulation. We use the percolation model to investigate the LWR of metal nano-particle resists, which cause condensation by the absorption of EUV photon to form the negate-tone image. Calculation shows threshold dose for image formation of 20 mJ/cm2 for the metal particles with typical parameters. We also investigate how the roughness initially produced by the photon shot noise develops during the process of development using diffusion-limited aggregation model. | |||||
会議概要(会議名, 開催地, 会期, 主催者等) | ||||||
内容記述タイプ | Other | |||||
内容記述 | 第2回QST国際シンポジウム | |||||
発表年月日 | ||||||
日付 | 2018-11-28 | |||||
日付タイプ | Issued |