WEKO3
アイテム
{"_buckets": {"deposit": "c30700e8-fd64-490a-a8b0-bcab1768cc49"}, "_deposit": {"created_by": 1, "id": "47725", "owners": [1], "pid": {"revision_id": 0, "type": "depid", "value": "47725"}, "status": "published"}, "_oai": {"id": "oai:repo.qst.go.jp:00047725", "sets": ["1"]}, "author_link": ["478870", "478873", "478875", "478874", "478871", "478876", "478872", "478877"], "item_8_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2016-05", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "756", "bibliographicPageStart": "753", "bibliographicVolumeNumber": "858", "bibliographic_titles": [{"bibliographic_title": "Materials Science Forum"}]}]}, "item_8_description_5": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "The charge enhancement in SiC-Schottky Barrier Didoes (SBDs) with different epi-layer thicknesses under the condition of the single-species ion irradiation was simulated to find out the mechanism of heavy-ion-induced anomalous charge collection in SiC-SBDs. The value of ion induced charge depended on the thickness of epitaxial-layer in the SBDs. The simulation result suggests that the impact ionization is one of the key effects to lead ion induced charge enhancement.", "subitem_description_type": "Abstract"}]}, "item_8_publisher_8": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "Trans Tech Publications, Switzerland"}]}, "item_8_relation_14": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "10.4028/www.scientific.net/MSF.858.753", "subitem_relation_type_select": "DOI"}}]}, "item_8_source_id_9": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "1662-9752", "subitem_source_identifier_type": "ISSN"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "metadata only access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_14cb"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Makino, Takahiro"}], "nameIdentifiers": [{"nameIdentifier": "478870", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Onoda, Shinobu"}], "nameIdentifiers": [{"nameIdentifier": "478871", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hoshino, Norihiro"}], "nameIdentifiers": [{"nameIdentifier": "478872", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Tsuchida, Hidekazu"}], "nameIdentifiers": [{"nameIdentifier": "478873", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Oshima, Takeshi"}], "nameIdentifiers": [{"nameIdentifier": "478874", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "牧野 高紘", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "478875", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "小野田 忍", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "478876", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "大島 武", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "478877", "nameIdentifierScheme": "WEKO"}]}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes"}]}, "item_type_id": "8", "owner": "1", "path": ["1"], "permalink_uri": "https://repo.qst.go.jp/records/47725", "pubdate": {"attribute_name": "公開日", "attribute_value": "2017-04-20"}, "publish_date": "2017-04-20", "publish_status": "0", "recid": "47725", "relation": {}, "relation_version_is_last": true, "title": ["Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes"], "weko_shared_id": -1}
Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes
https://repo.qst.go.jp/records/47725
https://repo.qst.go.jp/records/4772548111be5-d04b-4777-92bc-685b7ebc9fe7
Item type | 学術雑誌論文 / Journal Article(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2017-04-20 | |||||
タイトル | ||||||
タイトル | Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Makino, Takahiro
× Makino, Takahiro× Onoda, Shinobu× Hoshino, Norihiro× Tsuchida, Hidekazu× Oshima, Takeshi× 牧野 高紘× 小野田 忍× 大島 武 |
|||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | The charge enhancement in SiC-Schottky Barrier Didoes (SBDs) with different epi-layer thicknesses under the condition of the single-species ion irradiation was simulated to find out the mechanism of heavy-ion-induced anomalous charge collection in SiC-SBDs. The value of ion induced charge depended on the thickness of epitaxial-layer in the SBDs. The simulation result suggests that the impact ionization is one of the key effects to lead ion induced charge enhancement. | |||||
書誌情報 |
Materials Science Forum 巻 858, p. 753-756, 発行日 2016-05 |
|||||
出版者 | ||||||
出版者 | Trans Tech Publications, Switzerland | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1662-9752 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.4028/www.scientific.net/MSF.858.753 |