{"created":"2023-05-15T14:37:01.923158+00:00","id":47725,"links":{},"metadata":{"_buckets":{"deposit":"c30700e8-fd64-490a-a8b0-bcab1768cc49"},"_deposit":{"created_by":1,"id":"47725","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"47725"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00047725","sets":["1"]},"author_link":["478870","478873","478875","478874","478871","478876","478872","478877"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2016-05","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"756","bibliographicPageStart":"753","bibliographicVolumeNumber":"858","bibliographic_titles":[{"bibliographic_title":"Materials Science Forum"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The charge enhancement in SiC-Schottky Barrier Didoes (SBDs) with different epi-layer thicknesses under the condition of the single-species ion irradiation was simulated to find out the mechanism of heavy-ion-induced anomalous charge collection in SiC-SBDs. The value of ion induced charge depended on the thickness of epitaxial-layer in the SBDs. The simulation result suggests that the impact ionization is one of the key effects to lead ion induced charge enhancement.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Trans Tech Publications, Switzerland"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.4028/www.scientific.net/MSF.858.753","subitem_relation_type_select":"DOI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1662-9752","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Makino, Takahiro"}],"nameIdentifiers":[{"nameIdentifier":"478870","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Onoda, Shinobu"}],"nameIdentifiers":[{"nameIdentifier":"478871","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hoshino, Norihiro"}],"nameIdentifiers":[{"nameIdentifier":"478872","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tsuchida, Hidekazu"}],"nameIdentifiers":[{"nameIdentifier":"478873","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Oshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"478874","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野 高紘","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"478875","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"小野田 忍","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"478876","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"478877","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-04-20"},"publish_date":"2017-04-20","publish_status":"0","recid":"47725","relation_version_is_last":true,"title":["Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:36:13.943004+00:00"}