@article{oai:repo.qst.go.jp:00047725,
 author = {Makino, Takahiro and Onoda, Shinobu and Hoshino, Norihiro and Tsuchida, Hidekazu and Oshima, Takeshi and 牧野 高紘 and 小野田 忍 and 大島 武},
 journal = {Materials Science Forum},
 month = {May},
 note = {The charge enhancement in SiC-Schottky Barrier Didoes (SBDs) with different epi-layer thicknesses under the condition of the single-species ion irradiation was simulated to find out the mechanism of heavy-ion-induced anomalous charge collection in SiC-SBDs. The value of ion induced charge depended on the thickness of epitaxial-layer in the SBDs. The simulation result suggests that the impact ionization is one of the key effects to lead ion induced charge enhancement.},
 pages = {753--756},
 title = {Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes},
 volume = {858},
 year = {2016}
}