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{"_buckets": {"deposit": "911e1f1f-8e6b-4318-bec9-329644e67894"}, "_deposit": {"created_by": 1, "id": "47709", "owners": [1], "pid": {"revision_id": 0, "type": "depid", "value": "47709"}, "status": "published"}, "_oai": {"id": "oai:repo.qst.go.jp:00047709", "sets": ["1"]}, "author_link": ["478744", "478751", "478749", "478752", "478736", "478740", "478743", "478753", "478754", "478755", "478739", "478738", "478742", "478745", "478737", "478750", "478747", "478741", "478748", "478746"], "item_8_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2017-02", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "4", "bibliographicPageEnd": "1600425-7", "bibliographicPageStart": "1600425-1", "bibliographicVolumeNumber": "214", "bibliographic_titles": [{"bibliographic_title": "Phys. Status Solidi A"}]}]}, "item_8_description_5": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": " In order to develop highly radiation-tolerant SiC MOSFETs, we investigated the dependence of the gamma-ray radiation response on the gate oxide thickness and nitridation processes, used for oxide growth and p-well implantation. SiC MOSFETs with a thick gate oxide (60 nm) showed a rapid decrease in the threshold voltage shift ⊿Vth of more than 400 kGy, and transitioned to the normally-on state at lower doses than those with a thin gate oxide (35 nm). The MOSFETs with gate oxides treated with lower concentrations of N2O (10%) demonstrated a higher radiation tolerance (⊿Vth, channel mobility, and subthreshold swing) than with a 100% N2O treatment. The MOSFETs with more p-well implantation steps (three steps) showed a smaller negative shift of the threshold voltage relative to those implanted with two steps.", "subitem_description_type": "Abstract"}]}, "item_8_publisher_8": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "WILEY-VCH Verlag GmbH \u0026 Co."}]}, "item_8_relation_14": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "10.1002/pssa.201600425", "subitem_relation_type_select": "DOI"}}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "metadata only access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_14cb"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Mitomo, Satoshi"}], "nameIdentifiers": [{"nameIdentifier": "478736", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Matsuda, Takuma"}], "nameIdentifiers": [{"nameIdentifier": "478737", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Murata, Koichi"}], "nameIdentifiers": [{"nameIdentifier": "478738", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yokoseki, Takashi"}], "nameIdentifiers": [{"nameIdentifier": "478739", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Makino, Takahiro"}], "nameIdentifiers": [{"nameIdentifier": "478740", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Takeyama, Akinori"}], "nameIdentifiers": [{"nameIdentifier": "478741", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Onoda, Shinobu"}], "nameIdentifiers": [{"nameIdentifier": "478742", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Oshima, Takeshi"}], "nameIdentifiers": [{"nameIdentifier": "478743", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Okubo, Shuichi"}], "nameIdentifiers": [{"nameIdentifier": "478744", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Tanaka, Yuki"}], "nameIdentifiers": [{"nameIdentifier": "478745", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kandori, Mikio"}], "nameIdentifiers": [{"nameIdentifier": "478746", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yoshie, Toru"}], "nameIdentifiers": [{"nameIdentifier": "478747", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hijikata, Yasuto"}], "nameIdentifiers": [{"nameIdentifier": "478748", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "三友 啓", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "478749", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "松田 拓磨", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "478750", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "村田 航一", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "478751", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "牧野 高紘", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "478752", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "武山 昭憲", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "478753", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "小野田 忍", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "478754", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "大島 武", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "478755", "nameIdentifierScheme": "WEKO"}]}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Optimum structures for gamma-ray radiation resistant SiC-MOSFETs", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Optimum structures for gamma-ray radiation resistant SiC-MOSFETs"}]}, "item_type_id": "8", "owner": "1", "path": ["1"], "permalink_uri": "https://repo.qst.go.jp/records/47709", "pubdate": {"attribute_name": "公開日", "attribute_value": "2017-04-19"}, "publish_date": "2017-04-19", "publish_status": "0", "recid": "47709", "relation": {}, "relation_version_is_last": true, "title": ["Optimum structures for gamma-ray radiation resistant SiC-MOSFETs"], "weko_shared_id": -1}
Optimum structures for gamma-ray radiation resistant SiC-MOSFETs
https://repo.qst.go.jp/records/47709
https://repo.qst.go.jp/records/477094b2ef2ee-f185-4d95-8e5d-e96e868c4f06
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2017-04-19 | |||||
タイトル | ||||||
タイトル | Optimum structures for gamma-ray radiation resistant SiC-MOSFETs | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Mitomo, Satoshi
× Mitomo, Satoshi× Matsuda, Takuma× Murata, Koichi× Yokoseki, Takashi× Makino, Takahiro× Takeyama, Akinori× Onoda, Shinobu× Oshima, Takeshi× Okubo, Shuichi× Tanaka, Yuki× Kandori, Mikio× Yoshie, Toru× Hijikata, Yasuto× 三友 啓× 松田 拓磨× 村田 航一× 牧野 高紘× 武山 昭憲× 小野田 忍× 大島 武 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | In order to develop highly radiation-tolerant SiC MOSFETs, we investigated the dependence of the gamma-ray radiation response on the gate oxide thickness and nitridation processes, used for oxide growth and p-well implantation. SiC MOSFETs with a thick gate oxide (60 nm) showed a rapid decrease in the threshold voltage shift ⊿Vth of more than 400 kGy, and transitioned to the normally-on state at lower doses than those with a thin gate oxide (35 nm). The MOSFETs with gate oxides treated with lower concentrations of N2O (10%) demonstrated a higher radiation tolerance (⊿Vth, channel mobility, and subthreshold swing) than with a 100% N2O treatment. The MOSFETs with more p-well implantation steps (three steps) showed a smaller negative shift of the threshold voltage relative to those implanted with two steps. | |||||
書誌情報 |
Phys. Status Solidi A 巻 214, 号 4, p. 1600425-1-1600425-7, 発行日 2017-02 |
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出版者 | ||||||
出版者 | WILEY-VCH Verlag GmbH & Co. | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1002/pssa.201600425 |