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Threshold voltage instability and hysteresis in gamma-rays irradiated 4H-SiC junction field effect transistors
https://repo.qst.go.jp/records/86489
https://repo.qst.go.jp/records/86489baad9763-b176-4b38-b6b1-0184950d5478
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2022-06-17 | |||||
| タイトル | ||||||
| タイトル | Threshold voltage instability and hysteresis in gamma-rays irradiated 4H-SiC junction field effect transistors | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Akinori, Takeyama
× Akinori, Takeyama× Takahiro, Makino× Tanaka, Yasunori× Shin-Ichiro, Kuroki× Takeshi, Ohshima× Akinori, Takeyama× Takahiro, Makino× Takeshi, Ohshima |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | High dose irradiation effects of gamma-rays up to 17 MGy (H2O) on 4H-SiC JFETs was investigated. Due to the irradiation, gradual positive threshold voltage (Vth) shift as high as 0.5 V and continuous decrease in transconductance gm were observed. In addition, Vth instability and hysteresis appeared for the irradiated JFETs when the gate voltage (VG) sweep direction, sweep interval, i.e. averaged sweeping rate, sweep range and delay time were changed. Increase of VG interval attributed to positive Vth shift for both forward and reverse direction, whereas narrowing of sweep range and increase of delay time resulted in more noticeable negative shift of Vth for reverse direction. Such Vth hysteresis indicates that capture and release of carriers predominantly took place via hole traps formed around the gate region due to high dose gamma-ray irradiation. | |||||
| 書誌情報 |
Journal of Applied Physics 巻 131, p. 244503-1-244503-8, 発行日 2022-06 |
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| 出版者 | ||||||
| 出版者 | AIP Publishing | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0021-8979 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1063/5.0095841 | |||||
| 関連サイト | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1063/5.0095841 | |||||
