@article{oai:repo.qst.go.jp:00086489,
 author = {Akinori, Takeyama and Takahiro, Makino and Tanaka, Yasunori and Shin-Ichiro, Kuroki and Takeshi, Ohshima and Akinori, Takeyama and Takahiro, Makino and Takeshi, Ohshima},
 journal = {Journal of Applied Physics},
 month = {Jun},
 note = {High dose irradiation effects of gamma-rays up to 17 MGy (H2O) on 4H-SiC JFETs was investigated. Due to the irradiation, gradual positive threshold voltage (Vth) shift as high as 0.5 V and continuous decrease in transconductance gm were observed. In addition, Vth instability and hysteresis appeared for the irradiated JFETs when the gate voltage (VG) sweep direction, sweep interval, i.e. averaged sweeping rate, sweep range and delay time were changed. Increase of VG interval attributed to positive Vth shift for both forward and reverse direction, whereas narrowing of sweep range and increase of delay time resulted in more noticeable negative shift of Vth for reverse direction. Such Vth hysteresis indicates that capture and release of carriers predominantly took place via hole traps formed around the gate region due to high dose gamma-ray irradiation.},
 pages = {244503-1--244503-8},
 title = {Threshold voltage instability and hysteresis in gamma-rays irradiated 4H-SiC junction field effect transistors},
 volume = {131},
 year = {2022}
}