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  1. 原著論文

Membrane-supported LSI with integrated heater and temperature monitor for on-site annealing-recovery from 20 kGy gamma ray irradiation damage

https://repo.qst.go.jp/records/86359
https://repo.qst.go.jp/records/86359
19b6cf88-c562-42b8-900b-57364b8ccab0
Item type 学術雑誌論文 / Journal Article(1)
公開日 2022-06-17
タイトル
タイトル Membrane-supported LSI with integrated heater and temperature monitor for on-site annealing-recovery from 20 kGy gamma ray irradiation damage
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 Gong, Tianjiao

× Gong, Tianjiao

WEKO 1053361

Gong, Tianjiao

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Suzuki, Yukio

× Suzuki, Yukio

WEKO 1053362

Suzuki, Yukio

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Akinori, Takeyama

× Akinori, Takeyama

WEKO 1053363

Akinori, Takeyama

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Takeshi, Ohshima

× Takeshi, Ohshima

WEKO 1053364

Takeshi, Ohshima

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Tanaka, Shuji

× Tanaka, Shuji

WEKO 1053365

Tanaka, Shuji

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Akinori, Takeyama

× Akinori, Takeyama

WEKO 1053366

en Akinori, Takeyama

Search repository
Takeshi, Ohshima

× Takeshi, Ohshima

WEKO 1053367

en Takeshi, Ohshima

Search repository
抄録
内容記述タイプ Abstract
内容記述 In this study, we proposed a novel membrane-supported large-scale integration (LSI) with integrated heater and temperature monitor for on-site annealing-recovery from TID (total ionizing dose) effect with low energy consumption, aiming at solving the problem of integrated circuit (IC) damage by gamma ray irradiation. The heater and membrane structure were fabricated around an LSI by using MEMS (micro electromechanical systems) technology. The thermal characteristics of the microheater was studied for temperature monitoring to ensure an appropriate recovery temperature. 20 kGy gamma-ray irradiation was performed on the LSI samples and then the irradiated samples were annealed for recovery by the integrated microheater. It was found that the driving current of the LSI decreased after irradiation and almost recovered to the original level after 15-minutes annealing at 300°C. We report, for the first time, the successful recovery of the LSI from 20 kGy gamma-ray TID damage by using the integrated heater and temperature monitor.
書誌情報 Sensors and Actuators: A. Physical

巻 343, p. 113677-1-113677-7, 発行日 2022-06
出版者
出版者 Elsevier
DOI
識別子タイプ DOI
関連識別子 https://doi.org/10.1016/j.sna.2022.113677
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