@article{oai:repo.qst.go.jp:00086359,
 author = {Gong, Tianjiao and Suzuki, Yukio and Akinori, Takeyama and Takeshi, Ohshima and Tanaka, Shuji and Akinori, Takeyama and Takeshi, Ohshima},
 journal = {Sensors and Actuators: A. Physical},
 month = {Jun},
 note = {In this study, we proposed a novel membrane-supported large-scale integration (LSI) with integrated heater and temperature monitor for on-site annealing-recovery from TID (total ionizing dose) effect with low energy consumption, aiming at solving the problem of integrated circuit (IC) damage by gamma ray irradiation. The heater and membrane structure were fabricated around an LSI by using MEMS (micro electromechanical systems) technology. The thermal characteristics of the microheater was studied for temperature monitoring to ensure an appropriate recovery temperature. 20 kGy gamma-ray irradiation was performed on the LSI samples and then the irradiated samples were annealed for recovery by the integrated microheater. It was found that the driving current of the LSI decreased after irradiation and almost recovered to the original level after 15-minutes annealing at 300°C. We report, for the first time, the successful recovery of the LSI from 20 kGy gamma-ray TID damage by using the integrated heater and temperature monitor.},
 pages = {113677-1--113677-7},
 title = {Membrane-supported LSI with integrated heater and temperature monitor for on-site annealing-recovery from 20 kGy gamma ray irradiation damage},
 volume = {343},
 year = {2022}
}