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Numerical study of laser excitation in Silicon using Three-temperature model
https://repo.qst.go.jp/records/86169
https://repo.qst.go.jp/records/861697dcbfd7e-fdb5-41bc-b350-e667aeb6aadf
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2022-05-24 | |||||
| タイトル | ||||||
| タイトル | Numerical study of laser excitation in Silicon using Three-temperature model | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Venkat, Prachi
× Venkat, Prachi× Tomohito, Otobe× Venkat, Prachi× Tomohito, Otobe |
|||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Laser excitation in Silicon is studied using a new Three-Temperature model. The thresholds for partial melting and electron emission show good agreement with experimental results. Comparison with two-temperature model is also done. | |||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | Conference on Lasers and Electro-Optics (CLEO) | |||||
| 発表年月日 | ||||||
| 日付 | 2022-05-15 | |||||
| 日付タイプ | Issued | |||||
