{"created":"2023-05-15T15:03:36.965331+00:00","id":86169,"links":{},"metadata":{"_buckets":{"deposit":"6fa72c00-8728-4ce6-bd0e-c490ad42d340"},"_deposit":{"created_by":1,"id":"86169","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"86169"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00086169","sets":["10:28"]},"author_link":["1047924","1047925","1047922","1047923"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2022-05-15","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Laser excitation in Silicon is studied using a new Three-Temperature model. The thresholds for partial melting and electron emission show good agreement with experimental results. Comparison with two-temperature model is also done.","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"Conference on Lasers and Electro-Optics (CLEO)","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Venkat, Prachi"}],"nameIdentifiers":[{"nameIdentifier":"1047922","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tomohito, Otobe"}],"nameIdentifiers":[{"nameIdentifier":"1047923","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Venkat, Prachi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1047924","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tomohito, Otobe","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1047925","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"Numerical study of laser excitation in Silicon using Three-temperature model","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Numerical study of laser excitation in Silicon using Three-temperature model"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2022-05-24"},"publish_date":"2022-05-24","publish_status":"0","recid":"86169","relation_version_is_last":true,"title":["Numerical study of laser excitation in Silicon using Three-temperature model"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T17:12:02.642026+00:00"}