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Three-temperature model for laser processing of silicon and its dependence on laser parameters
https://repo.qst.go.jp/records/86029
https://repo.qst.go.jp/records/8602991d3dad6-abeb-487a-a4ce-132da95adbf6
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2022-04-22 | |||||
| タイトル | ||||||
| タイトル | Three-temperature model for laser processing of silicon and its dependence on laser parameters | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Venkat, Prachi
× Venkat, Prachi× Tomohito, Otobe× Venkat, Prachi× Tomohito, Otobe |
|||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Laser excitation and damage in silicon is studied using Three-Temperature Model. The quasi-temperatures of electron, hole and lattice sub-systems are considered separately and their evolution is studied. Damage threshold in silicon through various processes is calculated using 3TM and compared with the experimental results. Dependence of these thresholds on laser parameters is studied. | |||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | The 4th Smart Laser Processing Conference (SLPC-OPIC 2022) | |||||
| 発表年月日 | ||||||
| 日付 | 2022-04-19 | |||||
| 日付タイプ | Issued | |||||
