{"created":"2023-05-15T15:03:29.854702+00:00","id":86029,"links":{},"metadata":{"_buckets":{"deposit":"a3dad913-7be4-4f09-85e9-e8ade615e156"},"_deposit":{"created_by":1,"id":"86029","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"86029"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00086029","sets":["10:29"]},"author_link":["1043832","1043829","1043830","1043831"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2022-04-19","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Laser excitation and damage in silicon is studied using Three-Temperature Model. The quasi-temperatures of electron, hole and lattice sub-systems are considered separately and their evolution is studied. Damage threshold in silicon through various processes is calculated using 3TM and compared with the experimental results. Dependence of these thresholds on laser parameters is studied.","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"The 4th Smart Laser Processing Conference (SLPC-OPIC 2022)","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Venkat, Prachi"}],"nameIdentifiers":[{"nameIdentifier":"1043829","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tomohito, Otobe"}],"nameIdentifiers":[{"nameIdentifier":"1043830","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Venkat, Prachi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1043831","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tomohito, Otobe","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1043832","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"Three-temperature model for laser processing of silicon and its dependence on laser parameters","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Three-temperature model for laser processing of silicon and its dependence on laser parameters"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2022-04-22"},"publish_date":"2022-04-22","publish_status":"0","recid":"86029","relation_version_is_last":true,"title":["Three-temperature model for laser processing of silicon and its dependence on laser parameters"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T17:18:54.651706+00:00"}