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Utilizing a photosensitive dry film resist in proton beam writing
https://repo.qst.go.jp/records/85866
https://repo.qst.go.jp/records/85866dd80af51-1d6e-451e-b9b5-5fdbd63f45a6
Item type | 学術雑誌論文 / Journal Article(1) | |||||||
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公開日 | 2022-04-06 | |||||||
タイトル | ||||||||
タイトル | Utilizing a photosensitive dry film resist in proton beam writing | |||||||
言語 | ||||||||
言語 | eng | |||||||
資源タイプ | ||||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||
資源タイプ | journal article | |||||||
アクセス権 | ||||||||
アクセス権 | metadata only access | |||||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||||
著者 |
Hironori, Sek(芝浦工業大学)
× Hironori, Sek(芝浦工業大学)× Keiya, Kawamura(芝浦工業大学)× Hidetaka, Hayashi(芝浦工業大学)× Yasuyuki, Ishii× Nitipon Puttaraksa(King Mongkut’s University of Technology Thonburi, Thailand)
WEKO
1043897
× Hiroyuki, Nishikawa(芝浦工業大学)× Yasuyuki, Ishii |
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抄録 | ||||||||
内容記述タイプ | Abstract | |||||||
内容記述 | Dry film resists (DFRs) are suitable for the fabrication of large volume devices as the thickness of the film can be easily controlled. Here, the DFR microstructures were patterned using the proton beam writing (PBW) technique by taking advantages of the direct-write process, straight trajectories of protons, and large processing depth. The results show that the required irradiation dose of 15 μm DFR was 10 nC mm−2 for 1 MeV protons. In summary, we have optimized the PBW conditions to create smooth surface micropatterns with a vertical wall in the DFR. | |||||||
書誌情報 |
Japanese Journal of Applied Physics 巻 61, p. SD1006-1-SD1006-4, 発行日 2022-03 |
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出版者 | ||||||||
出版者 | 応用物理学会物理系学術誌刊行センター | |||||||
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収録物識別子タイプ | ISSN | |||||||
収録物識別子 | 0021-4922 | |||||||
DOI | ||||||||
識別子タイプ | DOI | |||||||
関連識別子 | 10.35848/1347-4065/ac55e1 | |||||||
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識別子タイプ | URI | |||||||
関連識別子 | https://iopscience.iop.org/article/10.35848/1347-4065/ac55e1/meta |