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Three-temperature modeling of laser-induced damage process in silicon
https://repo.qst.go.jp/records/85630
https://repo.qst.go.jp/records/85630cd62fc7f-bc33-48fb-93fb-55ee19fe7d1d
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2022-02-03 | |||||
| タイトル | ||||||
| タイトル | Three-temperature modeling of laser-induced damage process in silicon | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Venkat, Prachi
× Venkat, Prachi× Tomohito, Otobe× Venkat, Prachi× Tomohito, Otobe |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Laser excitation in silicon from femto- to pico-second time scales is studied. We assume the Three-Temperature Model (3TM) which describes the dynamics of the distinct quasi-temperatures for electrons, holes, and lattice. Numerical results for damage threshold reproduce the experimental results not only quantitatively, but qualitatively as well, showing dependence on laser pulse duration. Comparison with experimental data suggests that electron emission and thermal melting are both responsible for damage in silicon. We found that electron-phonon relaxation time has a significant effect on pulse duration dependence of electron emission. | |||||
| 書誌情報 |
Applied Physics Express 巻 15, p. 041008-1-041008-5, 発行日 2022-03 |
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| 出版者 | ||||||
| 出版者 | The Japan Society of Applied Physics | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 1882-0778 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.35848/1882-0786/ac5edb | |||||
| 関連サイト | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.35848/1882-0786/ac5edb | |||||
