{"created":"2023-05-15T15:03:12.832045+00:00","id":85630,"links":{},"metadata":{"_buckets":{"deposit":"0c5780a2-b401-4c22-a814-86397aab04ce"},"_deposit":{"created_by":1,"id":"85630","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"85630"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00085630","sets":["1"]},"author_link":["1041021","1041019","1041020","1041022"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2022-03","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"041008-5","bibliographicPageStart":"041008-1","bibliographicVolumeNumber":"15","bibliographic_titles":[{"bibliographic_title":"Applied Physics Express"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Laser excitation in silicon from femto- to pico-second time scales is studied. We assume the Three-Temperature Model (3TM)   which describes the dynamics of the distinct quasi-temperatures for electrons, holes, and lattice. Numerical results for damage threshold reproduce the experimental results not only quantitatively, but qualitatively as well,  showing dependence on laser pulse duration. Comparison with experimental data suggests that electron emission and thermal melting are both responsible for damage in silicon. We found that electron-phonon  relaxation time has a significant effect on pulse duration dependence of electron emission.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"The Japan Society of Applied Physics"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.35848/1882-0786/ac5edb","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.35848/1882-0786/ac5edb","subitem_relation_type_select":"DOI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1882-0778","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Venkat, Prachi"}],"nameIdentifiers":[{"nameIdentifier":"1041019","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tomohito, Otobe"}],"nameIdentifiers":[{"nameIdentifier":"1041020","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Venkat, Prachi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1041021","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tomohito, Otobe","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1041022","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Three-temperature modeling of laser-induced damage process in silicon","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Three-temperature modeling of laser-induced damage process in silicon"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2022-02-03"},"publish_date":"2022-02-03","publish_status":"0","recid":"85630","relation_version_is_last":true,"title":["Three-temperature modeling of laser-induced damage process in silicon"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T17:23:57.981686+00:00"}