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M-center in 4H-SiC: Isothermal DLTS and first principles modeling studies
https://repo.qst.go.jp/records/85240
https://repo.qst.go.jp/records/85240cc2a43b4-bd87-4d3a-a311-79e0c5f5e516
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2022-03-14 | |||||
タイトル | ||||||
タイトル | M-center in 4H-SiC: Isothermal DLTS and first principles modeling studies | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Capan, I.
× Capan, I.× Brodar, T.× Bernat, R.× Ž., Pastuović× Takahiro, Makino× Takeshi, Ohshima× D. Gouveia, J.× Coutinho, J.× Takahiro, Makino× Takeshi, Ohshima |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We report on a bistable defect known as M-center, here introduced in n-type 4H-SiC by 2 MeV He ion implantation. Deep levels of the M-center are investigated by means of junction spectroscopy techniques, namely, deep level transient spectroscopy (DLTS) and isothermal DLTS. In addition to previously reported three deep levels arising from the M-center (labeled as M1, M2, and M3), we provide direct evidence on the existence of a fourth transition (labeled as M4) with an activation energy of 0.86 eV. Activation energies and apparent capture cross sections for all four metastable defects are determined. From first-principles calculations, it is shown that the observed features of the M-center, including the charge state character, transition levels, bi-stability dynamics, and annealing, are all accounted for by a carbon self-interstitial. | |||||
書誌情報 |
Journal of Applied Physics 巻 130, 号 12, 発行日 2021-09 |
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出版者 | ||||||
出版者 | AIP Publishing | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0021-8979 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1063/5.0064958 | |||||
関連サイト | ||||||
識別子タイプ | URI | |||||
関連識別子 | https://aip.scitation.org/doi/pdf/10.1063/5.0064958 |