{"created":"2023-05-15T15:02:54.982264+00:00","id":85240,"links":{},"metadata":{"_buckets":{"deposit":"d48a8197-238f-4a3a-b5df-bcb882b753ef"},"_deposit":{"created_by":1,"id":"85240","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"85240"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00085240","sets":["1"]},"author_link":["1039104","1039100","1039108","1039105","1039103","1039107","1039102","1039101","1039109","1039106"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2021-09","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"12","bibliographicVolumeNumber":"130","bibliographic_titles":[{"bibliographic_title":"Journal of Applied Physics"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We report on a bistable defect known as M-center, here introduced in n-type 4H-SiC by 2 MeV He ion implantation. Deep levels of the M-center are investigated by means of junction spectroscopy techniques, namely, deep level transient spectroscopy (DLTS) and isothermal DLTS. In addition to previously reported three deep levels arising from the M-center (labeled as M1, M2, and M3), we provide direct evidence on the existence of a fourth transition (labeled as M4) with an activation energy of 0.86 eV. Activation energies and apparent capture cross sections for all four metastable defects are determined. From first-principles calculations, it is shown that the observed features of the M-center, including the charge state character, transition levels, bi-stability dynamics, and annealing, are all accounted for by a carbon self-interstitial.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"AIP Publishing"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1063/5.0064958","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://aip.scitation.org/doi/pdf/10.1063/5.0064958","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-8979","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Capan, I."}],"nameIdentifiers":[{"nameIdentifier":"1039100","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Brodar, T."}],"nameIdentifiers":[{"nameIdentifier":"1039101","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Bernat, R."}],"nameIdentifiers":[{"nameIdentifier":"1039102","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ž., Pastuović"}],"nameIdentifiers":[{"nameIdentifier":"1039103","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takahiro, Makino"}],"nameIdentifiers":[{"nameIdentifier":"1039104","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima"}],"nameIdentifiers":[{"nameIdentifier":"1039105","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"D. Gouveia, J."}],"nameIdentifiers":[{"nameIdentifier":"1039106","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Coutinho, J."}],"nameIdentifiers":[{"nameIdentifier":"1039107","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takahiro, Makino","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1039108","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1039109","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"M-center in 4H-SiC: Isothermal DLTS and first principles modeling studies","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"M-center in 4H-SiC: Isothermal DLTS and first principles modeling studies"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2022-03-14"},"publish_date":"2022-03-14","publish_status":"0","recid":"85240","relation_version_is_last":true,"title":["M-center in 4H-SiC: Isothermal DLTS and first principles modeling studies"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T17:28:14.531720+00:00"}