WEKO3
アイテム
Characteristic Charge Collection Mechanism Observed in FinFET SRAM cells
https://repo.qst.go.jp/records/82422
https://repo.qst.go.jp/records/82422d8a5000b-badb-4596-94e9-9a00a84a7181
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2021-03-22 | |||||
| タイトル | ||||||
| タイトル | Characteristic Charge Collection Mechanism Observed in FinFET SRAM cells | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Takeuchi, Kozo
× Takeuchi, Kozo× Sakamoto, Keita× Yukumatsu, Kazuki× Watanabe, Kyota× Tsuchiya, Yuta× Kato, Takashi× Matsuyama, Hideya× Akinori, Takeyama× Takeshi, Ohshima× Kuboyama, Satoshi× Shindo, Hiroyuki× Akinori, Takeyama× Takeshi, Ohshima |
|||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Characteristics of single event effects on 14/16-nm bulk FinFETs and static random access memories (SRAM) composed of them were investigated in terms of single-bit upsets and multiple-cell upsets. The single-bit and multiple-cell upsets are analyzed and classified according to voltage, linear energy transfer of irradiated heavy ion, irradiation angle, data and fail bit patterns of SRAM. Estimation of sensitive areas based on cross-section is also discussed. Numerical simulations help to explain these phenomena, revealing along-fin effects on N-type FinFETs in the SRAM bit cell. | |||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | Radiation Effects on Components and Systems (RADECS2020) | |||||
| 発表年月日 | ||||||
| 日付 | 2020-10-19 | |||||
| 日付タイプ | Issued | |||||
