@misc{oai:repo.qst.go.jp:00082422,
 author = {Takeuchi, Kozo and Sakamoto, Keita and Yukumatsu, Kazuki and Watanabe, Kyota and Tsuchiya, Yuta and Kato, Takashi and Matsuyama, Hideya and Akinori, Takeyama and Takeshi, Ohshima and Kuboyama, Satoshi and Shindo, Hiroyuki and Akinori, Takeyama and Takeshi, Ohshima},
 month = {Oct},
 note = {Characteristics of single event effects on 14/16-nm bulk FinFETs and static random access memories (SRAM) composed of them were investigated in terms of single-bit upsets and multiple-cell upsets. The single-bit and multiple-cell upsets are analyzed and classified according to voltage, linear energy transfer of irradiated heavy ion, irradiation angle, data and fail bit patterns of SRAM. Estimation of sensitive areas based on cross-section is also discussed. Numerical simulations help to explain these phenomena, revealing along-fin effects on N-type FinFETs in the SRAM bit cell., Radiation Effects on Components and Systems (RADECS2020)},
 title = {Characteristic Charge Collection Mechanism Observed in FinFET SRAM cells},
 year = {2020}
}