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Study for electron-hole plasma on semiconductor surface with THz free electron laser
https://repo.qst.go.jp/records/81111
https://repo.qst.go.jp/records/81111e1314cf3-95f2-4990-93d1-66251dba70da
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2020-11-02 | |||||
| タイトル | ||||||
| タイトル | Study for electron-hole plasma on semiconductor surface with THz free electron laser | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Kawase, Keigo
× Kawase, Keigo× Kawase, Keigo |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Although semiconductor is a good transparent material for the radiation with the wavelength from mid to far infrared, it becomes highly reflective when the electron-hole plasma is formed on the surface by irradiating the intense laser pulse. Thus, it is possible to use as a reflective switch with high-speed response for the radiation of mid to far infrared range. To study the details of the reflective characteristics and dynamics of the plasma switch, we conduct the experiments for several semiconductor materials with the THz free electron laser (FEL) and the Ti:sapphire laser. In this symposium, we will present the overview of the THz FEL at Osaka University and some result of the experiments. | |||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | 4th QST International Symposium | |||||
| 発表年月日 | ||||||
| 日付 | 2020-11-04 | |||||
| 日付タイプ | Issued | |||||
